Synthesis and Luminescence Properties of Core-Shell-Shell Composites: SiO2@PMDA-Si-Tb@SiO2 and SiO2@PMDA-Si-Tb-phen@SiO2
نویسندگان
چکیده
منابع مشابه
Synthesis and Luminescence Properties of Core/Shell ZnS:Mn/ZnO Nanoparticles
In this paper the influence of ZnO shell thickness on the luminescence properties of Mn-doped ZnS nanoparticles is studied. Transmission electron microscopy (TEM) images showed that the average diameter of ZnS:Mn nanoparticles is around 14 nm. The formation of ZnO shells on the surface of ZnS:Mn nanoparticles was confirmed by X-ray diffraction (XRD) patterns, high-resolution TEM (HRTEM) images,...
متن کاملSi/a-Si core/shell nanowires as nonvolatile crossbar switches.
Radial core/shell nanowires (NWs) represent an important class of nanoscale building blocks with substantial potential for exploring fundamental electronic properties and realizing novel device applications at the nanoscale. Here, we report the synthesis of crystalline silicon/amorphous silicon (Si/a-Si) core/shell NWs and studies of crossed Si/a-Si NW metal NW (Si/a-Si x M) devices and arrays....
متن کاملTransport modulation in Ge/Si core/shell nanowires through controlled synthesis of doped Si shells.
Appropriately controlling the properties of the Si shell in Ge/Si core/shell nanowires permits not only passivation of the Ge surface states, but also introduces new interface phenomena, thereby enabling novel nanoelectronics concepts. Here, we report a rational synthesis of Ge/Si core/shell nanowires with doped Si shells. We demonstrate that the morphology and thickness of Si shells can be con...
متن کاملModeling and Analysis of Core-Shell Si/SiGe Nanowires
In this thesis, I present a theoretical model for the Si core/SiGe shell core-shell nanowire system. A model for the single carrier pocket core-shell nanowire is first developed, along with the boundary conditions of a circular wire and sharp interfaces between the two media. A numerical scheme is then developed for the core-shell nanowire system, along with educated approximations for the nume...
متن کاملSimulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires
The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young's modulus and the linear coefficient of thermal expansion through separate simulations. These two material parameters are combined to obtain the thermal stress on th...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nanomaterials
سال: 2019
ISSN: 2079-4991
DOI: 10.3390/nano9020189